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RF COMMUNICATIONS PRODUCTS
NE/SE5539 High frequency operational amplifier
Product specification IC11 April 15, 1992
Philips Semiconductors
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements.
PIN CONFIGURATION
D, F, N Packages
1 2 3 4 5 6 7 + - 14 13 12 11
+ INPUT NC -VSUPPLY NC
- INPUT NC FREQUENCY COMPENS. NC
FEATURES
* Bandwidth
- Unity gain - 350MHz - Full power - 48MHz - GBW - 1.2GHz at 17dB
VOSADJ / AV ADJ NC GROUND
10 +V 9 8 NC OUTPUT
* Slew rate: 600/Vs * AVOL: 52dB typical * Low noise - 4nVHz typical * MIL-STD processing available
APPLICATIONS
Top View
SL00570
Figure 1. Pin Configuration
* High speed datacom * Video monitors & TV
ORDERING INFORMATION
DESCRIPTION 14-Pin Plastic Dual In-Line Package (DIP) 14-Pin Plastic Small Outline (SO) package 14-Pin Ceramic Dual In-Line Package 14-Pin Ceramic Dual In-Line Package
* Satellite communications * Image processing * RF instrumentation & oscillators * Magnetic storage * Military communications
TEMPERATURE RANGE 0 to +70C 0 to +70C 0 to +70C -55 to +125C
ORDER CODE NE5539N NE5539D NE5539F SE5539F
DWG # SOT27-1 SOT108-1 0581B 0581B
ABSOLUTE MAXIMUM RATINGS1
SYMBOL VCC PDMAX Supply voltage Maximum power dissipation, TA = 25C (still-air)2 F package N package D package Operating temperature range NE SE Storage temperature range Max junction temperature Lead soldering temperature (10sec max) PARAMETER RATING 12 UNITS V
1.17 1.45 0.99 0 to 70 -55 to +125 -65 to +150 150 +300
W W W C C C C C
TA TSTG TJ TSOLD
NOTES: 1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA. 2. Derate above 25C, at the following rates: F package at 9.3mW/C N package at 11.6mW/C D package at 7.9mW/C
1992 Apr 15
2
853-0814 06456
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
EQUIVALENT CIRCUIT
(12) FREQUENCY COMP. (10) +VCC
R18 (-) 14 INVERTING INPUT
R19
R3
R5
R2 (+) 1 NON-INVERTING INPUT R6 Q1 Q2 Q4
Q6
R8 Q5
Q3 Q7 Q8
R20
R21 R1 R4 R9 R10 2.2k
(8) OUTPUT
(7) GRD R13 Q10 R11 Q11 R12 R15 R14 R16 R17 (3) -VCC 5 R7
Q9
SL00571
Figure 2. Equivalent Circuit
DC ELECTRICAL CHARACTERISTICS
VCC = 8V, TA = 25C; unless otherwise specified. SYMBOL VOS PARAMETER Input offset voltage VOS/T Over temp IOS Input offset current IOS/T Over temp IB Input bias current IB/T CMRR RIN ROUT Common mode rejection ratio Input impedance Output impedance F = 1kHz, RS = 100, VCM 1.7V Over temp 70 70 TA = 25C TA = 25C TEST CONDITIONS Over temp VO = 0V RS = 100 0V, TA = 25C SE5539 MIN TYP 2 2 5 0.1 0.1 0.5 6 5 10 80 80 100 10 100 10 70 25 13 5 10 80 20 3 1 0.5 2 MAX 5 3 2.5 5 5 mV V/C A nA/C A nA/C dB k MIN NE5539 TYP MAX UNITS
1992 Apr 15
3
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS (Continued)
VCC = 8V, TA = 25C; unless otherwise specified. SYMBOL VOUT PARAMETER Output voltage swing TEST CONDITIONS RL = 150 to GND and 470 to -VCC RL = 25 to GND Over temp RL = 25 to GND TA = 25C +Swing -Swing +Swing -Swing +Swing -Swing +2.3 -1.5 +2.5 -2.0 +3.0 -2.1 +3.1 -2.7 14 14 11 11 300 18 17 15 14 1000 200 47 52 1000 57 11 15 14 18 SE5539 MIN TYP MAX MIN +2.3 -1.7 NE5539 TYP +2.7 -2.2 MAX UNITS V
VOUT
Output voltage swing
V
ICC CC+ ICC CCPSRR AVOL AVOL
Positive supply current Negative supply current Power supply rejection ratio Large signal voltage gain Large signal voltage gain
VO = 0, R1 = , Over temp VO = 0, R1 = , TA = 25C VO = 0, R1 = , Over temp VO = 0, R1 = , TA = 25C VCC = 1V, Over temp VCC = 1V, TA = 25C VO = +2.3V, -1.7V, RL = 150 to GND, 470 to -VCC VO = +2.3V, -1.7V RL = 2 to GND Over temp TA = 25C Over temp TA = 25C 46 48
mA mA V/V dB dB
47 60 53 58
52
57 dB
AVOL
Large signal voltage gain
VO = +2.5V, -2.0V RL = 2 to GND
DC ELECTRICAL CHARACTERISTICS
VCC = 6V, TA = 25C; unless otherwise specified. SYMBOL VOS IOS IB CMRR ICC CC+ ICC CCPSRR PARAMETER Input offset voltage Input offset current Input bias current Common-mode rejection ratio Positive supply current Negative supply current Power supply rejection ratio VCC = 1V Over VOUT Output voltage swing O l i RL = 150 to GND and 390 to -VCC temp TA = 25C VCM = 1.3V, RS = 100 Over temp TA = 25C Over temp TA = 25CmA Over temp TA = 25C +Swing -Swing +Swing -Swing +1.4 -1.1 +1.5 -1.4 +2.0 -1.7 +2.0 -1.8 V TEST CONDITIONS Over temp TA = 25C Over temp TA = 25C Over temp TA = 25C 70 SE5539 MIN TYP 2 2 0.1 0.1 5 4 85 11 11 8 8 300 14 13 11 10 1000 MAX 5 3 3 1 20 10 UNITS mV A A dB mA mA V/V
1992 Apr 15
4
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
AC ELECTRICAL CHARACTERISTICS
VCC = 8V, RL = 150 to GND and 470 to -VCC, unless otherwise specified. SYMBOL BW tS SR tPD PARAMETER Gain bandwidth product Small signal bandwidth Settling time Slew rate Propagation delay Full power response Full power response Input noise voltage Input noise current NOTES: 1. External compensation. TEST CONDITIONS ACL = 7, VO = 0.1 VP-P ACL = 2, RL = 1501 ACL = 2, RL = 1501 ACL = 2, RL = 1501 ACL = 2, RL = 1501 ACL = 2, RL = 1501 AV = 7, RL = 1501 RS = 50, 1MHz 1MHz SE5539 MIN TYP 1200 110 15 600 7 48 20 4 6 MAX MIN NE5539 TYP 1200 110 15 600 7 48 20 4 6 MAX UNITS MHz MHz ns V/s ns MHz MHz nV/Hz pA/Hz
AC ELECTRICAL CHARACTERISTICS
VCC = 6V, RL = 150 to GND and 390 to -VCC, unless otherwise specified. SYMBOL BW tS SR tPD PARAMETER Gain bandwidth product Small signal bandwidth Settling time Slew rate Propagation delay Full power response NOTES: 1. External compensation. TEST CONDITIONS ACL = 7 ACL = 21 ACL = 21 ACL = 21 ACL = 21 ACL = 21 SE5539 MIN TYP 700 120 23 330 4.5 20 MAX UNITS MHz ns V/s ns MHz
TYPICAL PERFORMANCE CURVES
NE5539 Open-Loop Phase
60 0 50 40 GAIN (dB)
NE5539 Open-Loop Gain
PHASE (DEG)
90
30
180
20 270 10 360 1 MHz 0 1 MHz
10MHz
100MHz
1GHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
SL00572
FREQUENCY (Hz)
SL00573
Figure 3. NE5539 Open-Loop Phase
Figure 4. NE5539 Open-Loop Gain
1992 Apr 15
5
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
TYPICAL PERFORMANCE CURVES (Continued)
Power Bandwidth (SE)
4 5 3 p-p OUTPUT (V) 4 3dB B.W 3 GAIN (--2) VCC = +8V RL = 2k p-p OUTPUT (V) 3dB B.W. 2 VCC = +6V RL = 150k GAIN (--2)
Power Bandwidth (NE)
1
2
0 1 MHz 10MHz FREQUENCY (Hz) 100MHz 300Mhz 10MHz FREQUENCY (Hz) 100MHz 300Mhz
1 1 MHz
SE5539 Open-Loop Gain vs Frequency
REF 3.04V P-P dB BELOW REF -2 -4 -6 -8 GAIN (-7) RL = 150 -12 10MHz FREQUENCY (Hz) 100MHz 300Mhz 1MHz
Power Bandwidth
50 40 GAIN (dB) 30 20 10 0o 1 MHz VCC = +6V RL = 126
-10
10MHz FREQUENCY (Hz)
100MHz
300MHz
SE5539 Open-Loop Phase vs Frequency
Gain Bandwidth Product vs Frequency
0 PHASE (DEG) GAIN (dB) 45 90 VCC = 6V RL = 126 10MHz FREQUENCY (Hz) 100MHz 300MHz
22 20 18 16
AV = X10
VCC = 6V RL = 150
AV = X7.5
3dB BANDWIDTH
135 180 1MHz
3dB BANDWIDTH 14 12 1MHz 10MHz FREQUENCY (Hz) 100MHz 300MHz
NOTE: Indicates typical distribution -55C TA 125C
SL00574
Figure 5. Typical Performance Curves
1992 Apr 15
6
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
CIRCUIT LAYOUT CONSIDERATIONS
As may be expected for an ultra-high frequency, wide-gain bandwidth amplifier, the physical circuit is extremely critical.
Bread-boarding is not recommended. A double-sided copper-clad printed circuit board will result in more favorable system operation. An example utilizing a 28dB non-inverting amp is shown in Figure 6.
OPTIONAL OFFSET ADJ. +V R5 R4 R1 -V
RF
+V
1nF
RFC -14 NE5539 10 8 73 +1
1nF
R3 75 470 R6 VOUT
75
TERM
75
VIN R2
1nF RFC
75 1nF --V
R1 = 75 5% CARBON R2 = 75 5% CARBON R3 = 75 5% CARBON R4 = 36K 5% CARBON
R5 = 20k TRIMPOT (CERMET) RF = 1.5k (28dB GAIN) R6 = 470 5% CARBON
RFC 3T # 26 BUSS WIRE ON FERROXCUBE VK 200 09/3B CORE BYPASS CAPACITORS 1nF CERAMIC (MEPCO OR EQUIV.)
Top Plane Copper1 (Component Side)
Component Side (Component Layout)
Bottom Plane Copper1
--V
X R2
R5 R4
X R1
+V X
RFC
(1) VIN X X X X XR 6 X X XX RF CC RFC
R5
SL00575
Figure 6. 28dB Non-Inverting Amp Sample PC Layout
1992 Apr 15
7
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
NE5539 COLOR VIDEO AMPLIFIER
The NE5539 wideband operational amplifier is easily adapted for use as a color video amplifier. A typical circuit is shown in Figure 7 along with vector-scope1 photographs showing the amplifier differential gain and phase response to a standard five-step modulated staircase linearity signal (Figures 8, 9 and 10). As can be seen in Figure 9, the gain varies less than 0.5% from the bottom to the top of the staircase. The maximum differential phase shown in Figure 10 is approximately +0.1. The amplifier circuit was optimized for a 75 input and output termionation impedance with a gain of approximately 10 (20dB). NOTE: 1. The input signal was 200mV and the output 2V. VCC was 8V.
750 75 --V
22nF -- 14 10 8 VIN + 75 --V 22nF --V 1 7 470 3 75
1
6dB LOSS--1
ZO = 75 75
SL00578
Figure 9. Differential Gain <0.5% NOTE: Instruments used for these measurements were Tektronix 146 NTSC test signal generator, 520A NTSC vectorscope, and 1480 waveform monitor.
SL00576
Figure 7. NE5539 Video Amplifier
SL00577
Figure 8. Input Signal
1992 Apr 15
8
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
SL00579
Figure 10. Differential Gain
+0.1o
+2V -8V 1 820 220 14 1K - 2K CLEAD 1.5pF 2-10pF NE5539 + 470 8 87 118 ZO = 50
ZIN = 500
SL00580
Figure 11. Non-Inverting Follower
+8V -8V 1 320 1K 2-20pF 14 50 - 1K + NE5539
470 118 8 87
3.3pF
SL00581
Figure 12. Inverting Follower
1992 Apr 15
9
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
April 15, 1992
10
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
April 15, 1992
11
0581B
April 15, 1992
0.110 (2.79) 0.050 (1.27)
Philips Semiconductors
High frequency operational amplifier
853-0581B 06688
0.110 (2.79) 0.050 (1.27)
NOTES: 1. Controlling dimension: Inches. Millimeters are shown in parentheses.
-E-
0.286 (7.26) 0.245 (6.22)
2. Dimension and tolerancing per ANSI Y14. 5M-1982. 3. "T", "D", and "E" are reference datums on the body and include allowance for glass overrun and meniscus on the seal line, and lid to base mismatch. 4. These dimensions measured with the leads constrained to be perpendicular to plane T.
PIN # 1 0.100 (2.54) BSC 0.785 (19.94) 0.753 (19.13)
5. Pin numbers start with Pin #1 and continue counterclockwise to Pin #14 when viewed from the top.
-D-
14-PIN (300 mils wide) CERAMIC DUAL IN-LINE (F) PACKAGE
12
0.200 (5.08) 0.165 (4.19) 0.175 (4.45) 0.145 (3.68) 0.165 (4.19) 0.125 (3.18) 0.045 (1.143) 0.020 (0.51) T ED 0.010 (0.254) 0.015 (0.38) 0.010 (0.25)
0.070 (1.78) 0.050 (1.27)
0.320 (8.13) 0.290 (7.37) (NOTE 4)
-T-
SEATING PLANE
0.023 (0.58) 0.015 (0.38)
BSC 0.300 (7.62) (NOTE 4) 0.395 (10.03) 0.300 (7.62)
NE/SE5539
Product specification
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. (c) Copyright Philips Electronics North America Corporation 1992 All rights reserved. Printed in U.S.A.
April 15, 1992
13

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